sot-23 plastic-encapsulate mosfets CJ3407 p-channel enhancement mode field effect transistor general description the CJ3407 uses advanced trench tec hnology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. marking: 3407 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -4.1 a power dissipation p d 350 mw thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -55~+150 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 / unless otherwise noted) parameter symbol test condition min typ max units static characteristics drain-source breakdown voltage bv dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =20v, v ds = 0v 100 na v gs =-10v, i d =-4.1a 60 m ? drain-source on-resistance (note 1) r ds(on) v gs =-4.5v, i d =-3a 87 m ? forward tranconductance (note 1) g fs v ds =-5v, i d =-4a 5.5 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -3 v diode forward voltage (note 1) v sd i s =-1a,v gs =0v -1 v dynamic characteristics (note 2) input capacitance c iss 700 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 75 pf switching characteristics (note 2) turn-on delay time t d(on) 8.6 ns turn-on rise time t r 5.0 ns turn-off delay time t d(off) 28.2 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ? ,r gen =3 ? 13.5 ns notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 20 40 60 80 100 -2 -4 -6 -8 -10 20 40 60 80 100 120 140 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 -25 i s ?? v sd ta=25 source current i s (a) source to drain voltage v sd (v) ta=25 transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs =-4.5v v gs =-10v ta=25 i d ?? r ds(on) on-resistance r ds(on) (m ) drain current i d (a) CJ3407 v gs ?? r ds(on) ta=25 i d =-4.3a on-resistance r ds(on) (m ) gate to source voltage v gs (v) v gs =-10v -8v -5v v gs =-4.5v v gs =-4v v gs =-3.5v output characteristics drain current i d (a) drain to source voltage v ds (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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